Apparatus for forming a film and an electroluminescence device

ABSTRACT

A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/252,254, filed Oct. 4, 2011, now allowed, which is a continuation ofU.S. application Ser. No. 10/826,920, filed Apr. 19, 2004, now U.S. Pat.No. 8,034,182, which claims the benefit of a foreign priorityapplication filed in Japan as Serial No. 2003-121313 on Apr. 25, 2003,all of which are incorporated by reference.

TECHNICAL FIELD TO WHICH THE INVENTION BELONGS

The present invention relates to a film forming apparatus employed forforming a film of a material capable of forming a film by deposition(referred to herein below as a deposition material) and a productionapparatus comprising such a film forming apparatus. In particular, thepresent invention relates to an evaporation apparatus in which a film isformed by evaporating a deposition material from a deposition sourceprovided opposite to a substrate. Besides, the present invention alsorelates to an electroluminescence device and method of manufacturingthereof.

RELATED ART

Light-emitting elements using organic compounds featuring smallthickness and weight, fast response, DC low-voltage drive, and the like,as light-emitting substances have been expected to find application inflat panel displays of the next generation. In particular, displaydevices in which light emitting elements are disposed as a matrix havebeen considered to be superior to the conventional liquid-crystaldisplays in that they have a wide viewing angle and excellentvisibility.

As for the light emission mechanism of light-emitting elements, it isthought that electrons introduced from a cathode and holes introducedfrom an anode recombinate in an organic compound layer at thelight-emitting center and form molecular excitons under the effect ofthe voltage applied to a pair of electrodes sandwiching a layercontaining the organic compound and energy is then released and light isemitted when the molecular excitons return to a ground state. Singletexcitation and triplet excitation are known as excited states and lightemission is considered to be possible via any excited state.

In light-emitting devices formed by arranging such light-emittingelements as a matrix, drive methods such as a passive matrix drive(simple matrix type) and active matrix drive (active matrix type) can beused. However, when the pixel density is increased, the active matrixtype, in which a switch is provided for each pixel (or 1 dot) isconsidered to be advantageous because a low-voltage drive is possible.

Further, a layer comprising an organic compound has a multilayerstructure, typically in the form of “hole transfer layer/light-emittinglayer/electron transfer layer”. EL materials forming an EL layer aregenerally classified into low-molecular (monomer) materials andhigh-molecular (polymer) materials, and low-molecular materials areemployed to form films in deposition apparatuses.

The conventional deposition apparatuses have a substrate disposed in asubstrate holder and comprise a container (or a deposition boat) havingan EL material, that is, a deposition material, introduced therein, ashutter preventing the sublimated EL material from rising, and a heaterfor heating the EL material located inside the container. The ELmaterial heated with the heater is sublimated and forms a film on therotating substrate. In order to conduct uniform film formation in thisprocess, the distance between the substrate and the container is set to1 m or more.

With the conventional deposition apparatus or deposition method, when anEL layer was formed by deposition, almost the entire sublimated ELmaterial adhered to the inner walls, shutter, or adhesion-preventingshield (a protective sheet for preventing the deposition material fromadhering to the inner walls of the film forming chamber) of the filmforming chamber of the deposition apparatus. For this reason, theutilization efficiency of expensive EL materials in the formation of theEL layer was extremely low, about 1% or less, and the production cost oflight-emitting devices was extremely high.

Further, in the conventional deposition apparatuses, the spacing betweenthe substrate and the deposition source was set to 1 m or more in orderto obtain a uniform film. Further, a problem associated with substrateswith a large surface area is that the film thickness can easily becomenonuniform in the central zone and peripheral edges of the substrate.Moreover, because the deposition apparatus has a structure with arotating substrate, a limitation is placed on the deposition apparatusesdesigned for substrates with a large surface area.

In addition, if a substrate with a large surface area and a mask fordeposition are rotated together after being brought into intimatecontact with each other, there is a risk of the displacement occurringbetween the mask and the substrate. Further, if the substrate or mask isheated during deposition, then dimensions change due to thermalexpansion. As a result, the dimensional accuracy and positional accuracydecrease owing to the difference in thermal expansion coefficientbetween the mask and substrate.

With the foregoing in view, the applicant of the present application hassuggested a deposition apparatus (Japanese Laid-Open Patent ApplicationsNo. 2001-247959 and 2002-60926) as means for resolving theaforementioned problems.

PROBLEMS ADDRESSED BY THE INVENTION

The present invention provides a production apparatus equipped with adeposition apparatus, which is a production apparatus reducingproduction cost by increasing the utilization efficiency of EL materialsand having excellent uniformity and throughput of EL layer deposition.

Further, the present invention also provides a production apparatus forefficient deposition of EL materials on substrates with a large surfacearea such as 320 mm×400 mm, 370 mm×470 mm, 550 mm×650 mm, 600 mm×720 mm,680 mm×880 mm, 1000 mm×1200 mm, 1100 mm×1250 mm, and 1150 mm×1300 mm.Further, the present invention also provides a deposition apparatus forobtaining a uniform film thickness over the entire substrate surfaceeven on a substrate with a large surface area.

MEANS FOR SOLVING THE PROBLEMS

The present invention forms layers containing organic compounds of anelectroluminescence element in a three-layer lamination to manufacture afull-color electroluminescence device with the small number of chambers.More specifically, a hole transport layer and an electron transportlayer of the three-layer lamination are used as common layers, and onlyan electroluminescence layer of an electroluminescence element emittinglight of red, green, or blue is coated separately for each pixel by onechamber. In other words, the layers containing organic compounds of theelectroluminescence element are manufactured by at least three chambers.Evaporation is performed in one chamber in a selective manner to formdifferent three electroluminescence layers. As shown in FIG. 1, threerobot arms (moving means) 106 a, 106 b, and 106 c mounted with differentevaporation sources move in the inside of one chamber freely to performfilm formation in order in a selective manner. Note that, when filmformation for one layer ends, a substrate 100 and a mask 113 are spacedapart, alignment of the substrate and the mask is shifted to a filmformation position of the next second layer and changed to perform filmformation for the next second layer. Then, when the film formation forthe second layer ends, the substrate and the mask are spaced apart inthe same manner and, film formation for the next third layer isperformed after performing alignment of the substrate and the mask.

In addition, while one arm is moved to perform evaporation, the otherarms are on standby in installation chambers, and evaporation isperformed by alternating in order.

Further, depending upon a pixel arrangement, positions to be evaporatedare made different for pixels of R, G, and B. Therefore, alignment ofthe substrate and the mask is performed for each luminescent color toperform evaporation in order. Separate coating for R, G, and B isperformed by shifting a position using an identical mask.

Moreover, it is assumed that the robot arms moving the evaporationsources can move in a Z direction and is capable of rising and falling.In addition, revolution centers of the robot arms may be located in theinstallation chambers or may be located in the film formation chambers.

A constitution of the invention disclosed in this specification, anexample of which is shown in FIG. 1, is an apparatus for forming a filmhaving a load chamber, a conveyance chamber connected to the loadchamber, and plural film formation chambers connected to the conveyancechamber, characterized in that the film formation chambers are connectedto an evacuation and exhaust treatment chamber that evacuates the filmformation chamber and include: aligning means that aligns a mask and asubstrate; substrate holding means; means that heats the substrate;

a first evaporation source; means that moves the first evaporationsource;

a second evaporation source; means that moves the second evaporationsource;

a third evaporation source; and means that moves the third evaporationsource.

In the above constitution, the apparatus for forming a film ischaracterized in that installation chambers are connected to the filmformation chambers, and the installation chambers are connected toevacuating and exhausting means that evacuates the installation chambersand have a mechanism for setting an evaporation material in theevaporation source in the installation chamber.

In the above constitution, the apparatus for forming a film ischaracterized in that the film formation chambers and the installationchambers are connected to the evacuation and exhaust treatment chamberthat evacuates the chambers and have means that can introduce a materialgas or a cleaning gas.

In the above constitution, the apparatus for forming a film ischaracterized in that the evaporation sources are movable in an Xdirection, a Y direction, or a Z direction in the film formationchambers.

In the above constitution, the apparatus for forming a film ischaracterized in that the film formation chambers have shutters thatsection the film formation chambers and shield evaporation to thesubstrate.

In the above constitution, the apparatus for forming a film ischaracterized in that a sealing chamber is connected to the conveyancechamber, and the sealing chamber is connected to evacuating andexhausting means, which evacuates the sealing chamber, has a mechanismfor applying a seal material with an ink jet method in the sealingchamber. Note that, after stacking layers containing organic compoundsand a cathode (or anode) with evaporation, a seal layer is formed by theink jet method without being exposed to the atmosphere. In addition, aprotective film consisting of an inorganic insulating film may be formedwith a sputtering method before forming the seal layer with the ink jetmethod.

In sealing of an electroluminescence element, a space between a sealingsubstrate and an element substrate is filled with the seal material. Ifthe electroluminescence element is a top emittion type, it is desirableto use a transparent seal material. In addition, the seal material isdripped in a pixel area before sticking the substrates. It is preferableto spray the seal material over the pixel area with the ink jet methodunder decompression.

It is also possible that, after spraying the seal material over thepixel area with the ink jet method under decompression and hardening theseal material, an inorganic insulating film represented by a siliconnitride film is formed by the sputtering method, and the formation of asilicon nitride film after spraying the seal material with the ink jetmethod under decompression and hardening the seal material is repeated.Intrusion of moisture and impurities from the outside air can be blockedby providing the lamination of the seal material and the inorganicinsulating film, and reliability is improved.

In addition, another constitution of the invention is anelectroluminescence device including plural electroluminescence elementsthat have a cathode, layers containing organic compounds in contact withthe cathode, and an anode in contact with the layers containing organiccompounds, characterized in that

a first electroluminescence element, a second electroluminescenceelement, and a third electroluminescence element are arranged in theelectroluminescence device,

the first electroluminescence element has a lamination of at least ahole transport layer, a first electroluminescence layer, and an electrontransport layer,

the second electroluminescence element has a lamination of at least thehole transport layer, a second electroluminescence layer, and theelectron transport layer,

the third electroluminescence element has a lamination of at least thehole transport layer, a third electroluminescence layer, and theelectron transport layer, and

two layers among the first electroluminescence layer, the secondelectroluminescence layer, and the third electroluminescence layeroverlap partially.

In the above constitution, among the layers containing organic compoundssandwiched by the anode and the cathode, the two layers, the holetransport layer and the electron transport layer, are shared by theelectroluminescence layers. Therefore, since evaporation accuracy ofthese two layers does not matter so much, an evaporation device withhigh accuracy has to be used only for the electroluminescence layers. Inaddition, it is desirable to select a material and a thicknessappropriately when the two layers are shared and the electroluminescencedevice is made full-color.

In addition, in the above constitution, the electroluminescence deviceis characterized in that the electroluminescence elements have a holeinjection layer consisting of a polymeric material. In the case in whichthe hole injection layer consisting of a polymeric material is formed byan application method using spin coat or the like, planarity isimproved, and coverage and uniformity of thickness of a film formed onthe hole injection layer can be made satisfactory. In particular, sincethickness of the electroluminescence layer is made uniform, uniformlight emission can be obtained.

Further, in the above constitution, the electroluminescence device ischaracterized in that the first electroluminescence element emits lightof one of red, green, and blue.

Moreover, in the case in which a large area substrate that can be formedmultiply is used, several evaporation masks stuck together are used.Therefore, depending on accuracy of sticking the evaporation masks, itis likely that deviation occurs for each panel in a TFT substrate and anevaporation pattern. Thus, in the invention, an evaporation pattern ismeasured in advance, setting of a stepper in TFT manufacturing iscorrected appropriately on the basis of a value of the measurement toalign an exposure pattern. A pattern with less deviation can be obtainedif evaporation is performed using an evaporation mask after the TFTmanufacturing with the stepper subjected to correction.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view showing an evaporation device of the invention.(First Embodiment Mode)

FIG. 2 is a sectional view showing the evaporation device of theinvention. (First Embodiment Mode)

FIGS. 3A to 3E are diagrams showing examples of a container to be set inan evaporation source. (First Embodiment Mode)

FIG. 4 is a top view showing an apparatus for forming a film of theinvention. (First Embodiment)

FIGS. 5A to 5D are diagrams showing a drip spray device. (SecondEmbodiment Mode)

FIG. 6 is a sectional view showing an electroluminescence device of theinvention. (Second Embodiment Mode)

FIGS. 7A and 7B are a top view and a sectional view of a panel providedwith an auxiliary wiring. (Second Embodiment Mode)

FIG. 8 is a diagram showing a process flow diagram. (Third EmbodimentMode)

FIGS. 9A to 9D are sectional views showing an electroluminescence deviceof the invention. (Fourth Embodiment Mode)

FIG. 10 is a top view showing the electroluminescence device of theinvention. (Fourth Embodiment Mode)

FIGS. 11A to 11D are sectional views showing the electroluminescencedevice of the invention. (Fourth Embodiment Mode)

FIGS. 12A and 12B are a top view and a sectional view showing anelectroluminescence device of the invention. (Second Embodiment)

FIGS. 13A to 13G are diagrams showing examples of electronic devices.(Third Embodiment)

FIG. 14 is a block diagram of a cellular phone using theelectroluminescence device of the invention. (Fourth Embodiment)

FIG. 15 is an explanatory diagram of creation of a reverse signal forthe electroluminescence device of the invention. (Fourth Embodiment)

FIG. 16 shows a state in which the cellular phone using theelectroluminescence device of the invention is being charged. (FourthEmbodiment)

EMBODIMENT MODES OF THE INVENTION

Embodiment modes of the invention will be hereinafter explained.

First Embodiment Mode

FIG. 1 shows an example of a top view of an evaporation device of theinvention.

In FIG. 1, reference numeral 100 denotes a substrate; 101, a filmformation chamber; 102 a to 102 c, installation chambers; 103 a to 103 cand 104, shutters; 105, a conveyance chamber; 106 a to 106 c, robotarms; 107, evaporated areas; 108, areas to be panels; 109, anevaporation holder; and 110, a container.

Note that an example in which nine areas to be panels 108 are designedon the substrate 100 is shown.

Although an example in which the shutters 103 a to 103 c and theinstallation chambers 106 a to 106 c are arranged in sideways is shownhere, the arrangement is not specifically limited, and three robots maybe arranged in one installation chamber.

In addition, a mask 113 is aligned in contact with the substrate 100,and RGB are separately coated by shifting one mask by a size of onepixel and performing alignment several times to perform evaporation.

FIG. 2 shows a sectional view cut along an alternate long and short dashline in FIG. 1. Note that, in FIG. 2, portions identical with those inFIG. 1 are denoted by the identical reference numerals and signs.

The mask 113 of a thin plate shape having a pattern opening is fixed toa mask frame 114 of a frame shape by adhesion or welding. It ispreferable to perform evaporation while performing heating suitable fora material to be evaporated, and a position where the mask frame 114 isfixed only has to be determined appropriately such that moderate tensionis applied to the mask at temperature of the heating. In addition,alignment with a substrate is performed by a mask holder 111 supportingthe mask 113 and the mask frame 114. First, a conveyed substrate issupported by an alignment mechanism 112 a and mounted on the mask holder111. Subsequently, the substrate mounted on the mask 113 is broughtclose to an alignment mechanism 112 b to attract and fix the substratetogether with the mask 113 by a magnetic force. Note that a permanentmagnet (not shown) and heating means (not shown) are provided in thealignment mechanism 112 b.

When evaporation is performed, a tip of the robot arm 106 a, which is onstandby in the installation chamber 102 a, is moved to the filmformation chamber 101, and evaporation is performed while moving therobot arm 106 a in an X direction, a Y direction, or a Z direction. Atthe tip of the robot arm 106 a, the evaporation holder 109 is provided,and the container 110 containing an evaporation material is set. Asshown in FIG. 1, the three robot arms (moving means) 106 a, 106 b, and106 c mounted with difference evaporation sources move in one chamberfreely to sequentially perform film formation in a selective manner.

In the case in which co-evaporation for evaporating materials fromdifferent evaporation sources on an identical substrate is performed, anattachment angle of the evaporation sources may be set freely such thatan evaporation center is aligned with one point on a substrate to beevaporated. However, a space between two evaporation sources isnecessary to some extent in order to incline the substrate together withthe evaporation sources. Therefore, as shown in FIGS. 3A to 3C, it ispreferable to form the container 110 in a prism shape to adjust theevaporation center in a direction of the opening of the container. It issufficient that the container is constituted by an upper part 800 a anda lower part 800 b, and plural upper parts with different angles, atwhich an evaporation material is flown out from an elliptical opening810, are prepared and selected appropriately. Since a way of spreadingor the like of evaporation is different depending on an evaporationmaterial, it is sufficient to prepare two evaporation sources attachedwith different upper parts 800 a when the co-evaporation is performed.

It is important to mix two kinds of different evaporation materials inthe co-evaporation. With the containers shown in FIGS. 3A to 3C, theevaporation materials are mixed immediately after being discharged froman opening of the container, whereby a film can be formed on thesubstrate. In particular, in the evaporation device show in FIG. 2, aspace distance d between the substrate and the evaporation holder isnarrowed to representatively 30 cm or less, preferably 20 cm or less,and more preferably 5 cm to 15 cm to remarkably improve efficiency ofuse of the evaporation materials.

Note that FIG. 3A is a perspective view of the container, FIG. 3B is asectional view cut along an alternate long and short dash line A-B, andFIG. 3C is a sectional view cut along a dotted line C-D.

In the case in which an attachment angle of an evaporation source ischanged, a cylindrical container and a heater surrounding the containerare inclined. Thus, in the case in which co-evaporation is performedusing two containers, a space between the containers is increased. Whenthe space is increased, it becomes difficult to mix different twoevaporation materials uniformly. In addition, in the case in which it isdesired to perform evaporation by narrowing a space between theevaporation source and a substrate, it becomes difficult to obtainuniform films.

Thus, in the invention, rather than changing the attachment angle of theevaporation source, an evaporation center is adjusted by the opening 810of the container upper part 800 a. The container is constituted by thecontainer upper part 800 a, the container lower part 800 b, and a middlelid 800 c. Note that plural small holes are provided in the middle lid800 c, and an evaporation material is passed through the holes at thetime of evaporation. In addition, the container is formed of a materialsuch as a sintered compact of BN, a compound sintered compact of BN andAlN, quartz, or graphite so as to withstand high temperature, highpressure, and decompression. Since a direction and a way of spreading ofevaporation is different depending on an evaporation material,containers with an area of the opening 810 and positions of a guideportion of the opening and the opening adjusted suitable for eachevaporation material are prepared appropriately.

By adopting the container of the invention, the evaporation center canbe adjusted without inclining the heater of the evaporation source. Inaddition, as shown in FIG. 3D, in co-evaporation, both an opening 810 aand an opening 810 b are placed to be opposed to each other to narrow aspace between plural containers containing plural different evaporationmaterials (a material A 805 and a material B 806), whereby evaporationcan be performed while mixing the evaporation materials uniformly. InFIG. 3D, heating means 801 to 804 are connected to separate powersupplies and perform temperature adjustment independently from eachother. In addition, in the case in which it is desired to performevaporation by narrowing the space between the evaporation source andthe substrate to, for example, 20 cm or less, uniform films can also beobtained.

An example different from FIG. 3D is shown in FIG. 3E. FIG. 3E shows anexample in which evaporation is performed using the upper part 800 awith the opening 810 c, from which an evaporation material is vaporizedin a vertical direction, and the upper part 800 a having the opening 810d inclined to meet the direction. In FIG. 3E, heating means 801, 803,807, and 808 are also connected to separate power supplies and performtemperature adjustment independently from each other.

In addition, since the containers of the invention shown in FIGS. 3A to3E has oblong elliptical openings, a uniform evaporation area iswidened. Thus, the containers are suitable for performing evaporationuniformly while fixing a large area substrate.

FIG. 4 shows an apparatus for forming films of a multi-chamber typeincluding the evaporation device shown in FIG. 1 as one chamber. Notethat a structure of FIG. 4 will be described in a First Embodiment. Inaddition, it is needless to mention that it is possible to include theevaporation device as one chamber of an apparatus for forming a film ofan inline type.

Second Embodiment Mode

Here, an example for performing seal dripping, seal drawing, orformation of auxiliary wiring with a droplet jet method,representatively, an ink jet method, using a device shown in FIGS. 5A to5D will be described.

FIG. 5A is a schematic perspective view showing an example of astructure of a linear droplet jet device. The linear droplet jet deviceshown in FIG. 5A has heads 306 a to 306 c and jets droplets from theheads 306 a to 306 c to thereby obtain a desired droplet pattern on asubstrate 310. The linear droplet jet device can be applied to, otherthan a glass substrate with a desired size, a resin substraterepresented by a plastic substrate, or a treated object such as asemiconductor wafer represented by silicon as the substrate 310.

In FIG. 5A, the substrate 310 is carried into a treatment chamber 515from a carrying entrance 304, the substrate subjected to droplet jettingtreatment is returned and carried out from the carrying entrance 304.The substrate 310 is mounted on a conveyance stand 303, and theconveyance stand 303 moves on rails 313 a and 315 b extending from thecarrying entrance.

A head support section 307 supports the heads 306 a to 306 c for jettingdroplets and moves in parallel with the conveyance stand 303. When thesubstrate 310 is carried into the treatment chamber 515, the headsupport section 307 simultaneously moves to meet a predeterminedposition where first droplet jetting treatment is performed. Themovement of the heads 306 a to 306 c to the initial position isperformed at the time when the substrate is carried in or at the timewhen the substrate is carried out, whereby jetting treatment can beperformed efficiently.

Here, the heads 306 a to 306 c for jetting three different kinds ofmaterials are prepared. For example, a seal material containing a gapmaterial, a seal material containing transparent resin for filling aspace between substrates, and an ink containing electrically conductiveparticulates for forming wiring and electrodes can be jetted from thehead 306 a, 306 b, and 306 c, respectively.

The droplet jetting treatment is started when the substrate 310 reachesa predetermined position according to the movement of the conveyancestand 303. The droplet jetting treatment is attained by a combination ofrelative movement of the head support section 307 and the substrate 310and droplet jet from the heads 306 a to 306 c supported by the heatsupport section. By adjusting moving speeds of the substrate 310 and thehead support section 307 and a period of jetting droplets from the heads306 a to 306 c, a desired droplet pattern can be drawn on the substrate310. In particular, since high accuracy is required for the dropletjetting treatment, it is desirable to stop the movement of theconveyance stand 303 at the time of droplet jet and sequentially useonly the head support section 307 with high controllability forscanning. It is desirable to select a drive system with highcontrollability such as a servomotor or a pulse motor for driving of theheads 306 a to 306 c. In addition, the scanning by the head supportsection 307 for the heads 306 a to 306 c is not limited to onedirection, and the droplet jetting treatment may be performed byreciprocation or repetition of reciprocation. Droplets can be jettedover the entire substrate by the movement of the substrate 310 and thehead support section 307.

Droplets are supplied to liquid chambers inside the heads 306 a to 306 cfrom droplet supply sections 309 a to 309 c installed outside thetreatment chamber 515 via the head support section 307. This supply ofdroplets is controlled by control means 308 installed outside thetreatment chamber 515 but may be controlled by control meansincorporated in the head support section 307 inside the treatmentchamber 515.

Main functions of the control means 308 are, other than the control forthe supply of droplets, control for the movement of the conveyance stand303 and the head support section 307 and droplet jet corresponding tothe movement. In addition, it is possible to download data of patterndrawing by the droplet jet from the outside of the device throughsoftware such as a CAD. These data are input by a method such as graphicinput or coordinate input. An automatic residue warning function may beadded by providing a mechanism, which detects a residue of a compositionused as droplets, inside the heads 306 a to 306 c to transferinformation indicating the residue to the control means 308.

Although not shown in FIG. 5A, a sensor for positioning the substrate ora pattern on the substrate, means for introducing gas to the treatmentchamber 515, exhaust means inside the treatment chamber 515, means forsubjecting the substrate 310 to heating treatment, means for irradiatinglight on the substrate 310, means for measuring various physicalproperty values such as temperature and pressure, and the like may befurther installed as required. In addition, it is also possible tocollectively control these means with the control means 308 installedoutside the treatment chamber 515. Moreover, if the control means 308 isconnected to a production control system or the like by a LAN cable, awireless LAN, or an optical fiber, it becomes possible to uniformlycontrol processes from the outside, which leads to improvement inproductivity.

FIG. 5B shows a state in which a first seal material 312 and a secondseal material 314 are dripped on the substrate 310 using two of thethree heads 306 a to 306 c. The first seal material 312 is used fordrawing by the head 306 a, and the second seal material 314 is drippedby the head 306 b so as to cover a pixel portion 311. The materials maybe jetted from the two heads simultaneously, or may be jetted from onehead and hardened and then jetted from the other head. Note that FIG. 5Dshows a perspective view of the substrate 310 for which the jettingtreatment of the first seal material 312 and the second seal material314 has been completed. A material to be jetted from the nozzle 306 a isnot specifically limited as long as the material is an organic material.It is sufficient to use ultraviolet curing or thermoset epoxy resinrepresentatively. A material to be jetted from the nozzle 306 b is notspecifically limited as long as the material is an organic materialhaving translucency. It is sufficient to use ultraviolet curing orthermoset epoxy resin representatively.

In addition, an ultraviolet ray irradiating function or a heating lampmay be provided in the device shown in FIG. 5A to harden a seal materialin the device.

A container (canister can) for stocking a material solution in asolution application device is prepared for the droplet supply sections309 a to 309 c. It is desirable to form the container with a materialhaving air tightness, in particular, sufficient resistance againstpenetration of oxygen and moisture, and it is sufficient to usestainless steel, aluminum, or the like. In addition, an introductionport for introducing nitrogen, a rare gas, or other inert gases isprovided in the container, and an inert gas is introduced from theintroduction port to pressurize internal pressure of the container. If alarge pressure difference occurs between the internal pressure of thecontainer and an internal pressure of a film formation chamber, theinternal pressure of the container may be decompressed. For example, itis sufficient to set the internal pressure of the container to a degreeof vacuum lower than a degree of vacuum inside the film formationchamber.

In addition, in the case in which the internal pressure of the containeris decompressed, since it is likely that the gas flows back when thetreatment chamber 515 is pressurized to the atmospheric pressure, abackflow preventing mechanism using a ball is provided. A structureinside the heads 306 a to 306 c is explained in FIG. 5C. In FIG. 5C, anarea surrounded by a dotted line is an enlargement of a head portion ina device for applying solution (hereinafter referred to as solutionapplying device), and a part of the figure shows an internal structure.Protrusions for regulating a floating amount of a ball 321 are providedon a section A such that an ink flows beside the ball 321. The ball 321has a diameter slightly smaller than a diameter of a supply pipe so asto be floatable in a certain range. In addition, this ball 321 alsoplays a role of easing a steep flow of the ink. The supply pipe isnarrowed in the middle and has a smaller diameter than the diameter ofthe ball 321 on a section B such that, when a fluid flows back, the ball321 completely blocks the supply pipe. The heads have jetting sections317 having a function of jetting a solution, and piezoelectric elements316 are provided in the respective jetting sections 317. Thepiezoelectric elements 316 are provided so as to block the supply pipes.Gaps are formed between the piezoelectric element 316 s and inner wallsof the pipes due to vibration, and a liquid (a seal material or an inkcontaining electrically conductive particulates represented by anano-metal ink) is passed through the gaps. The liquid can be jettedforcefully even if the gaps are small because the inside of the filmformation chamber is decompressed. In addition, a liquid is filled inthe respective jetting sections. Note that FIG. 5C shows a state inwhich a shutter is closed due to vibration of the piezoelectric element316.

Here, an example in which the droplet jet is performed by a so-calledpiezo method using the piezoelectric element 316 is described. However,depending on a material of a droplet, a so-called thermal method(thermal ink jet method) for heating a heating element to cause bubblesand push out the droplet may be used. In this case, the piezoelectricelement 316 is replaced with the heating element.

Note that only one jetting section is shown in FIG. 5C. However, it ispossible to arrange plural jetting sections (nozzles) in parallel. Itcan be said that, considering throughput, it is most desirable toarrange the jetting sections by the number of pixels for one row or onecolumn in a pixel portion or the number equivalent to one side of anarea surrounding the pixel portion.

Evacuating and exhausting means (not shown) may be connected to thetreatment chamber 515 to maintain a space between the heads 306 a to 306c and the substrate 310 at decompression, that is, a pressure lower thanthe atmospheric pressure. More specifically, the pressure is 1×10² to2×10⁴ Pa (preferably, 5×10² to 5×10³ Pa) for an inert atmosphere. Theliquid (a seal material or an ink containing electrically conductiveparticulates) filled in the jetting section 317 is pulled out from thenozzle by opening and closing the supply pipe with the piezoelectricelement 316 to decompress the treatment chamber 515 and jetted towardthe substrate 310. Then, the jetted droplet advances while volatilizingsolvent under decompression, and the remaining material (a seal materialor electrically conductive particulates) deposits on the substrate.Then, droplets are sequentially discharged from the jetting section(nozzle) 317 at predetermined timing. As a result, the material isdeposited intermittently.

The droplet can be jetted on the substrate 310 to be treated by theabove-mentioned means. The droplet jetting method includes a so-calledsequential method (dispenser method) for jetting droplets continuouslyto form a linear pattern and an on-demand method for jetting droplets ina dot shape. In the device structure in FIGS. 5A to 5D, the on-demandmethod is shown. However, it is also possible to use head according tothe sequential method.

In addition, as another application, as shown in FIG. 6, in order toseal electroluminescence elements covered by an inorganic insulatinglayer 620 a more firmly, it is also possible that a seal layer 621 a isformed using only the nozzle 306 b and hardened, then, an inorganicinsulating layer 620 b is formed by the sputtering method on the seallayer 621 a, a seal layer 621 b is formed on the inorganic insulatinglayer 620 b using only the nozzle 306 b again and hardened, and then aninorganic insulating layer 620 c and a seal layer 621 c are formed inthe same manner. In particular, intrusion of moisture and impuritiesfrom a side of a panel is blocked by a lamination of the seal layers 621a to 621 c and the inorganic insulating layers 620 a to 620 c.

Note that, in FIG. 6, reference numeral 600 denotes a substrate; 601, atransparent electrode; 603, a polarization plate; 606, a cover; 607, aseal material (including a gap material); 620 a to 620 c, inorganicinsulating layers (silicon nitride film (SiN), silicon oxide nitridefilm (SiNO), aluminum nitride film (AlN), or aluminum nitride oxide film(AlNO), etc.); 621 a to 621 c, seal layers; 622, a transparentelectrode; and 623, a partition wall (also called bank). In addition,reference sign 624 b denotes a layer containing organic compounds, whichforms blue light emission as an electroluminescence element, 624 gdenotes a layer containing organic compound, which forms green lightemission as an electroluminescence element, and 624 r denotes a layercontaining organic compounds, which forms red light emission as anelectroluminescence element, whereby full-color display is realized.Note that the transparent electrode 601 is an anode (or cathode) of anelectroluminescence element connected to a source electrode or a drainelectrode of a TFT.

In addition, as another application, an auxiliary wiring 70 may be drawnby the ink jet method using the nozzle 306 c as shown in FIG. 7B. FIG.7B shows a sectional view of one pixel in a pixel portion 82 shown inFIG. 7A. A layer containing organic compounds consisting of a holetransport layer 79H, an electroluminescence layer 79G, and an electrontransport layer 79E is formed on a second electrode (anode) 72, and atransparent electrode 73 to be a first electrode (cathode) is providedon the layer. The transparent electrode 73 to be the first electrode(cathode) is a lamination of a thin film containing metal with a smallwork function (alloy such as MgAg, MgIn, AlLi, CaF₂, or CaN, or filmformed of an element belonging to first group or second group in aperiodic table and aluminum by a co-evaporation method) and atransparent conductive film (ITO (indium oxide tin oxide alloy), indiumoxide zinc oxide alloy (In₂O₃—AnO), zinc oxide (ZnO), etc.).

The auxiliary wiring 70 is formed on the transparent electrode 73, whichis a cathode for the electroluminescence element, to realize reductionin resistance as electrodes as a whole. In addition, the auxiliarywiring 70 also functions as a light shielding film, which leads toimprovement of contrast. A lead wiring, a connection wiring, and thelike may be formed by the ink jet method in the same manner.

As a material to be jetted from the nozzle 306 c, for example, anorganic solution of a paste-like metal material, a conductive polymer inwhich the paste-like metal is dispersed, or the like, an organicsolution of a metal material in an ultra-fine particle state, aconductive polymer in which the metal material is dispersed, or the likecan be used. The metal material in an ultra-fine particle state is ametal material processed into particulates of several μm to sub μm orparticulates in an nm level. One or both of the particulates aredispersed in an organic solution and used.

In addition, in FIG. 7A, reference numeral 82 denotes a pixel portion;83, a source side drive circuit; 84 and 85, gate side drive circuits;86, a power supply line; and 72, a second electrode (anode). Wirings tobe formed simultaneously with the first electrode are a power supplyline 86, a lead wiring 87, and a source wiring. In FIG. 7A, a terminalelectrode to be connected to an FPC is formed simultaneously with a gatewiring.

This Embodiment Mode can be combined with the First Embodiment Modefreely.

Third Embodiment Mode

Here, a method of controlling deviation of an evaporation pattern isprovided.

Usually, a TFT, a pixel electrode (an electrode to be an anode or acathode of an electroluminescence element), and a partition wall (alsocalled a bank) are formed according to a marker on a substrate.Thereafter, evaporation is applied to the substrate in which the TFT,the pixel electrode, and the partition wall (bank) are formed. Inparticular, if positions of the pixel electrode and a layer containingorganic compounds deviate, a defect, for example, short circuit iscaused.

In a mask for multiple forming, several masks adhere with each other inthe same pattern. If accuracy of adhesion is poor, deviation occurs foreach panel.

Thus, in the invention, a stepper exposure position is corrected on thebasis of an evaporation pattern, which is obtained by applyingevaporation to a dummy substrate using a mask, a TFT is manufactured onthe basis of the stepper exposure position, and thereafter, evaporationis performed, whereby deviation is controlled. In other words, a TFT ismanufactured according to a mask to be used.

FIG. 8 shows a flow diagram of the invention. First, evaporation isapplied to a test substrate using a mask. Although the mask for multipleforming with plural masks stuck is manufactured to have high accuracy,the masks may deviate slightly, and it is likely that there is a subtledifference depending on each mask. It is also possible that anevaporation pattern depends on an evaporation device. Here, anevaporation pattern in an evaporation device used in manufacturing of anelectroluminescence device is obtained.

Subsequently, a large number of obtained evaporation patterns aremeasured. Amounts of deviation at four corners and in the center aremeasured in both the X direction and the Y direction with respect to oneshot of a stepper on the basis of obtained data to create correcteddata.

Subsequently, an exposure position of the stepper is set on the basis ofthe corrected data. In this way, stepper exposure setting according to aspecific evaporation mask can be performed.

Subsequently, an active matrix substrate is manufactured.

A TFT, an anode (or cathode), and a partition wall are formed on thebasis of the evaporation pattern measured in advance. Therefore, when afilm containing organic compounds is formed by evaporation, deviationcan be reduced.

In the case in which the evaporation mask is changed, it is sufficientto measure an evaporation pattern every time the evaporation mask ischanged, and stepper exposure and the like are adjusted on the basis ofa value of the measurement.

Fourth Embodiment Mode

Here, the invention will be hereinafter explained with 3×3 pixels amonga large number of pixels regularly arranged in a pixel portion as anexample.

FIG. 9A is an example of a sectional view. Among layers containingorganic compounds sandwiched by an anode and a cathode, at least onelayer, for example, a hole transport layer (or hole injection layer) 19His shared. In FIG. 9A, an electron transport layer (or electroninjection layer) 19E is also shared. In the example of FIG. 9A,electroluminescence layers 19R, 19G, and 19B are evaporated with highaccuracy, respectively. Therefore, end faces of the electroluminescencelayers 19R, 19G, and 19B are located on a partition wall (bank) 24.

In addition, if two layers among the layers containing organic compoundssandwiched by the anode and the cathode are shared, since accuracy ofevaporation of the two layers does not matter so much, an evaporationdevice with high accuracy has to be used only for electroluminescencelayers. Therefore, in the case in which a common layer other than theelectroluminescence layers is formed, it is preferable to use the inkjet method or the spin coating method that can treat the layer inrelatively short time. It is desirable to select a material and athickness appropriately when the two layers are shared and theelectroluminescence device is made full-color.

Reference numerals 11 to 13 denote cathodes (anodes) of anelectroluminescence element, and 20 denotes an anode (or cathode) of theelectroluminescence element. Both ends of the cathodes (or anodes) 11 to13 of the electroluminescence element and a part between the ends arecovered by the partition wall (bank) 24 formed of an inorganicinsulating object. Here, a transparent conductive film is used as theanode (or cathode) 20 of the electroluminescence element to pass lightfrom each electroluminescence element.

A sealing substrate (not shown here) is stuck by a seal material (notshown here) such that a space of about 10 μm is kept as a distance tothe anode (cathode) 20 of the electroluminescence element, whereby allelectroluminescence elements are closed.

In FIG. 9A, a TFT 1 is an element that controls a current flowing to anelectroluminescence element emitting red light, and reference numerals 4and 7 denote a source electrode or a drain electrode. In addition, a TFT2 is an element that controls a current flowing to anelectroluminescence element emitting green light, and reference numerals5 and 8 denote a source electrode or a drain electrode. A TFT 3 is anelement that controls a current flowing to an electroluminescenceelement emitting blue light, and reference numerals 6 and 9 denote asource electrode or a drain electrode. Reference numerals 15 and 16denote an interlayer insulating film consisting of an organic insulatingmaterial or an inorganic insulating film material.

FIG. 9B is another example of a sectional view. As shown in FIG. 9B, theelectroluminescence layer 19R emitting red light and theelectroluminescence layer 19G emitting green light are laid one on topof another partially to form a laminated portion 21 b. In addition, theelectroluminescence layer 19G emitting green light and theelectroluminescence layer 19B emitting blue light are laid one on top ofanother partially to form a laminated portion 22 b. It is useful forwidening an electroluminescence area and manufacturing a bright displayto locate laminated portions 21 b and 22 b on the partition wall (bank)24, in particular, to reduce a width of the partition wall (bank) 24(e.g., 10 μm, preferably 5 μm or less) to stack electroluminescencelayers.

Since the electroluminescence layers may be laid one on top of anotherin this way, when a full-color flat panel display usingelectroluminescence colors of red, green, and blue is manufactured, highdefinition and a high aperture ratio can be realized regardless of afilm formation method (the ink jet method, the evaporation method, thespin coating method, etc.) for a layer containing organic compounds oraccuracy of film formation.

In particular, in the case in which electroluminescence layers of red,green and blue (R, G, and B) are formed by the ink jet method with whichthe electroluminescence layers can be formed simultaneously, treatmenttime can be further reduced.

FIG. 9C is another example of a sectional view. In FIG. 9C, a laminatedportion 21 c is provided on the cathode (or anode) 12 of theelectroluminescence element. Therefore, the laminated portion 21 c alsoemits light slightly.

FIG. 10 is a top view corresponding to FIG. 9C. In FIG. 10, anelectroluminescence area 10R indicates an electroluminescence area forred, an electroluminescence area 10G indicates an electroluminescencearea for green, and an electroluminescence area 10B indicates anelectroluminescence area for blue. A full-color electroluminescencedisplay device is realized by these electroluminescence areas for threecolors. In the invention, an electroluminescence layer emitting redlight and an electroluminescence layer emitting green light are laid oneon top of another partially to form a laminated portion. In addition, anelectroluminescence layer emitting green light and anelectroluminescence layer emitting blue light are laid one on top ofanother partially to form a laminated portion.

Electroluminescence luminance in the laminated portion is about onethousandth of electroluminescence luminance in the electroluminescenceareas 10R, 10G, and 10B. In addition, since the electroluminescencelayers overlap at an identical width in the X direction (or Y direction)in the laminated portion, same luminance correction only has to beperformed on one line. A person carrying out the invention only has toadjust luminance of an entire panel appropriately by changing a signalapplied to an electroluminescence element according to a set width inthe laminated portion.

In addition, FIG. 9D is another example of a sectional view. A laminatedportion 21 d covers the partition wall (bank) 24 completely, and slightemitted light due to the laminated portion is present on both sides ofthe partition wall (bank) 24.

In addition, in FIGS. 9A to 9D, a structure for emitting light in adirection toward the transparent electrode 20 from the layer containingorganic compounds, a structure for emitting light in a direction towardthe TFT from the layer containing organic compounds, or a structure foremitting light in both the directions can be adopted.

FIG. 11A is an example in which a hole injection layer 29H is formed bythe application method. Note that, since FIG. 11A is different from FIG.9A only in a lamination structure of a layer containing organiccompounds, the identical portions are denoted by the same referencenumerals and signs.

The hole injection layer 29H only has to be formed by the ink jet methodor the spin coat method using poly (ethylene dioxythiophene)/poly(styrene sulfonic acid) water solution (PEDOT/PSS),polyaniline/camphorsulfonic acid water solution (PANI/CSA), PTPDES,Et-PTPDEK, PPBA, or the like.

In addition, FIG. 11A shows an example in which the electroluminescencelayers 29R, 29G, and 29B are evaporated with high accuracy,respectively. Therefore, end faces of the electroluminescence layers29R, 29G, and 29B are located on the partition wall (bank) 24. In thecase in which the hole injection layer 29H is formed by the spin coatmethod, the hole injection layer 29H is rarely formed on the partitionwall (bank) 24. Therefore, a side of the partition wall (bank) 24 iscovered by the hole injection layer 29H, but the electroluminescencelayers 29B, 29G, and 29R are in contact with each other over thepartition wall (bank) 24. Note that, although not shown in the figurehere, a hole transport layer common to all pixels is provided betweenthe electroluminescence layers 29B, 29G, and 29R and the hole injectionlayer 29H.

In the case in which the hole injection layer consisting of a polymericmaterial is formed by the application method using spin coat or thelike, planarity is improved, and coverage and uniformity of thickness ofa film formed on the hole injection layer can be made satisfactory. Inparticular, since thickness of the electroluminescence layer is madeuniform, uniform light emission can be obtained. In this case, it ispreferable to perform heating under vacuum (100 to 200° C.) immediatelybefore film formation of the electroluminescence layers 29B, 29G, and29R by the evaporation method after forming a hole injection layer withthe application method. For example, after cleaning a surface of a firstelectrode (anode) with a sponge, after applying poly (ethylenedioxythiophene)/poly (styrene sulfonic acid) water solution (PEDOT/PSS)over the entire surface with a thickness of 60 nm by the spin coatmethod, and after subjecting the substrate to preliminary baking for tenminutes at 80° C. and main baking for one hour at 200° C. and to heatingunder vacuum (170° C., heating for thirty minutes, cooling for thirtyminutes) immediately before evaporation, the electroluminescence layers29B, 29G, and 29R only have to be formed by the evaporation methodwithout being exposed to the atmosphere. In particular, in the case inwhich an ITO film is used as an anode material and unevenness and fineparticles are present on a surface thereof, influence of theseunevenness and fine particles can be reduced by setting the thickness ofPEDOT/PSS to 30 nm or more.

FIG. 11B is another example of a sectional view. As shown in FIG. 11B,the electroluminescence layer 29R emitting red light and theelectroluminescence layer 29G emitting green light are laid one on topof another partially to form a laminated portion 31 b. In addition, anelectroluminescence layer 29G emitting green light and theelectroluminescence layer 29B emitting blue light are laid one on top ofanother partially to form a laminated portion 32 b. In this figure,again, since the hole injection layer 29H is formed by the spin coatmethod, the hole injection layer 29H is rarely formed on the partitionwall (bank) 24.

FIG. 11C is another example of a sectional view. In FIG. 11C, alaminated portion 31 c is provided on a cathode (or anode) 12 of anelectroluminescence element. Therefore, the laminated portion 31 c alsoemits light slightly.

FIG. 11D is another example of a sectional view. A laminated portion 31d covers the partition wall 24 completely, slight emitted light due tothe laminated portion 31 d is present on both sides of the partitionwall (bank) 24.

Note that, in the case in which the structures shown in FIGS. 9A to 9Dand FIGS. 11A to 11D are adopted, the hole injection layer 29H can beformed by the spin coat method, and the hole transport layer 19H, theelectroluminescence layers 19R, 19G, 19B, 29R, 29G, and 29B, and theelectron transport layer 19E can be formed by the ink jet method. Inaddition, even if all the hole injection layer, the hole transportlayer, the electroluminescence layers, and the electron transport layerare formed by the ink jet method, a high definition electroluminescencedevice can be manufactured.

The invention consisting of the above constitution will be explainedmore in detail according to Embodiments to be described below.

EMBODIMENTS First Embodiment

In this Embodiment, an example in which a full-color display panel ismanufactured will be described.

A procedure for carrying a substrate, on which an anode (firstelectrode) and an insulator (partition wall) covering an end of theanode are provided in advance, into the apparatus for forming filmsshown in FIG. 4 and manufacturing an electroluminescence device will behereinafter described. Note that, in the case in which anelectroluminescence device of an active matrix type is manufactured, athin film transistor connected to the anode (TFT for current control)and plural other thin film transistors (TFT for switching, etc.) areprovided on a substrate in advance, and a drive circuit consisting ofthin film transistors is also provided. In addition, in the case inwhich an electroluminescence device of a passive matrix type ismanufactured, it is also possible to manufacture the electroluminescencedevice with the apparatus for forming films shown in FIG. 4.

First, the substrate (600 mm×720 mm) is set in a substrate introducingchamber 520. As a substrate size, it is possible to cope with a largearea substrate like 320 mm×400 mm, 370 mm×470 mm, 550 mm×650 mm, 600mm×720 mm, 680 mm×880 mm, 1000 mm×1200 mm, 1100 mm×1250 mm, and 1150mm×1300 mm.

The substrate (the substrate provided with an anode and an insulatorcovering an end of the anode) set in the substrate introducing chamber520 is conveyed to a conveyance chamber 518 maintained at atmosphericpressure. Note that a conveying mechanism (conveyance robot, etc.) forconveying and reversing the substrate is provided in the conveyancechamber 518.

The robot provided in the conveyance chamber 518 can reverse the frontand the back of the substrate and can carry the substrate into adelivery chamber 505 in a reversed state. The delivery chamber 505 isconnected to an evacuation and exhaust treatment chamber and can be madevacuum by being evacuated and exhausted and can be pressurized to theatmospheric pressure by introducing an inert gas after being evacuatedand exhausted.

The evacuation and exhaust treatment chamber is provided with aturbo-molecular pump of a magnetically levitated type, a cryopump, or adry pump. The same pump is also provided in conveyance chambers 502,508, and 514, whereby it is possible to set an ultimate pressure in theconveyance chambers 502, 508, and 514 connected to respective chambersto 10⁻⁵ to 10⁻⁶ Pa. Moreover, back diffusion of impurities from the pumpside and an exhaust system can be controlled. In order to preventimpurities from being introduced into the device, inert gases such asnitrogen or rare gas are used as a gas to be introduced. As these gasesto be introduced into the device, gases highly purified by a gaspurifier before being introduced into the device are used. Therefore, itis necessary to provide a gas purifier such that a gas is introducedinto the evaporation device after being highly purified. Consequently,since oxygen, water, and other impurities contained in the gas can beremoved in advance, these impurities can be prevented from beingintroduced into the device. In addition, it is preferable to clean thesurface of the first electrode (anode) with a porous sponge(representatively, a sponge made of PVA (polyvinyl alcohol) or nylon)containing a surface active agent (alkalescence) to remove dusts on thesurface before setting the substrate in the substrate introducingchamber 520 in order to reduce point defects that are pixels for whichlight emission control is not performed by an input signal in a display.As a cleaning mechanism, a cleaning device having a roll brush (made ofPVA), which rotates around an axis parallel to the surface of thesubstrate and comes into contact with the surface of the substrate, maybe used, or a cleaning device having a disk brush (made of PVA), whichcomes into contact with the surface of the substrate while rotatingaround an axis perpendicular to the surface of the substrate, may beused.

Subsequently, the substrate is conveyed from the conveyance chamber 518to the delivery chamber 505 and is further conveyed from the deliverychamber 505 to the conveyance chamber 502 without being exposed to theatmosphere.

In addition, in order to remove shrinkage, it is preferable to performheating under vacuum before evaporation of a film containing organiccompounds. In order to convey the substrate from the conveyance chamber502 to a multi-stage vacuum heating chamber 521 and thoroughly removemoisture and the other gases contained in the substrate, annealing fordegassing is performed in the vacuum (5×10⁻³ Torr (0.665 Pa) or less,preferably 10⁻⁴ to 10⁻⁶ Torr). In the multi-stage vacuum heating chamber521, plural substrates are heated uniformly using a flat heater(representatively, a sheath heater). A plurality of the flat heaters areset, and the substrate can be heated from both sides as if the substrateis nipped by the flat heaters. It is needless to mention that thesubstrate can be heated from one side. In particular, in the case inwhich an organic resin film is used as a material for the interlayerinsulating film and the partition wall, the organic resin film tends toabsorb moisture depending upon an organic resin material, and it islikely that degassing occurs, it is effective to performing naturalcooling for thirty minutes and perform heating under vacuum for removingabsorbed moisture after performing heating for, for example, thirtyminutes or more at 100° C. to 250° C., preferably 150° C. to 200° C.before forming the layer containing organic compounds.

In addition to the heating under vacuum, UV may be irradiated whileperforming heating at 200 to 250° C. in the inert gas atmosphere. Inaddition, it is sufficient to only perform processing for irradiating UVwhile performing heating at 200 to 250° C. in the inert gas atmospherewithout performing the heating under vacuum. If necessary, a holeinjection layer consisting of a polymeric material may be formed by theink jet method, the spin coat method, or the spray method under theatmospheric pressure or decompression in the film formation chamber 512.Uniformity of film thickness may be realized by a spin coater afterapplying the material with the ink jet method. Similarly, uniformity offilm thickness may be realized by the spin coater after applying thematerial with the spray method. In addition, the substrate may be placedlengthwise to form a film with the ink jet method in the vacuum.

For example, poly (ethylene dioxythiophene)/poly (styrene sulfonic acid)water solution (PEDOT/PSS), polyaniline/camphorsulfonic acid watersolution (PANI/CSA), PTPDES, Et-PTPDEK, PPBA, or the like, which acts asa hole injection layer (anode buffer layer) may be applied to the entiresurface on the first electrode (anode) and baked in the film formationchamber 512. In the baking, it is preferable to perform the baking inmulti-stage heating chambers 523 a and 523 b.

In the case in which a hole injection layer (HIL) consisting of apolymeric material is formed by the application method using spin coator the like, planarity is improved, and coverage and uniformity ofthickness of a film formed on the hole injection layer can be madesatisfactory. In particular, since thickness of the electroluminescencelayer is made uniform, uniform light emission can be obtained. In thiscase, after forming the hole injection layer with the applicationmethod, it is preferable to perform heating under the atmosphericpressure or heating under vacuum (100 to 200° C.) immediately before thefilm formation by the evaporation method.

For example, after cleaning a surface of a first electrode (anode) witha sponge, after carrying the substrate into the substrate introducingchamber 520, conveying the substrate to the film formation chamber 512a, and applying poly (ethylene dioxythiophene)/poly (styrene sulfonicacid) water solution (PEDOT/PSS) over the entire surface with athickness of 60 nm by the spin coat method, and after conveying thesubstrate to the multi-stage heating chambers 523 a and 523 b andsubjecting the substrate to preliminary baking for ten minutes at 80° C.and main baking for one hour at 200° C., and conveying the substrate tothe multi-stage vacuum heating chamber 521 and subjecting the substrateto heating under vacuum (170° C., heating for thirty minutes, coolingfor thirty minutes) immediately before evaporation, the substrate onlyhas to be conveyed to a film formation chamber 506H of a hole transportlayer, a film formation chamber 506RGB of an electroluminescence layer,and a film formation chamber 506E of an electron transport layer to forma layer containing organic compounds with the evaporation method withoutbeing exposed to the atmosphere. In particular, in the case in which anITO film is used as an anode material and unevenness and fine particlesare present on a surface thereof, influence of these unevenness and fineparticles can be reduced by setting the thickness of PEDOT/PSS to 30 nmor more. In addition, in order to improve a leaking property ofPEDOT/PSS, it is preferable to irradiate ultraviolet rays in a UVtreatment chamber 531.

In addition, in the case in which a film of PEDOT/PSS is formed by thespin coat method, since the film is formed on the entire surface, it ispreferable to remove the film on an end face of the substrate and in aperipheral part, a terminal part, a cathode, a connection area with alower wiring, and the like in a selective manner, and it is preferableto remove the film by O₂ ashing or the like using a mask in a selectivemanner in a pre-treatment chamber 503. The pre-treatment chamber 503 hasplasma generating means and excites one or plural kinds of gas selectedout of Ar, H, F, and O to generate plasma to thereby perform dryetching. By using the mask, only unnecessary parts can be removed in aselective manner. Note that an evaporation mask is stocked in mask stockchambers 524 a and 524 b and conveyed to the respective film formationchambers 506H, 506RGB, and 506H according to circumstances whenevaporation is performed. Since an area of the mask is increased if alarge substrate is used, a size of a frame for fixing the mask isincreased to make it difficult to stock many masks. Thus, the two maskstock chambers 524 a and 524 b are prepared here. Cleaning of theevaporation mask may be performed in the mask stock chambers 524 a and524 b. In addition, since the mask stock chambers become empty at thetime of evaporation, it is possible to stock a substrate after filmformation or after treatment in the mask stock chambers.

Subsequently, the substrate is conveyed from the conveyance chamber 502to a delivery chamber 507 and further conveyed from the delivery chamber507 to the conveyance chamber 508 without being exposed to theatmosphere.

Subsequently, the substrate is conveyed to the respective film formationchambers 506H, 506RGB, and 506E connected to the conveyance chamber 508appropriately to form a layer containing organic compounds, whichconsists of a monomeric material, to be a hole transport layer, anelectroluminescence layer, and an electron transport layerappropriately. Installation chambers 526 h and 526 e for setting anevaporation material in an evaporation holder are provided in the filmformation chamber 506H of the hole transport layer and the filmformation chamber 506E of the electron transport layer, respectively. Inaddition, three installation chambers 526 r, 526 g, and 526 b areprovided in the film formation chamber 506RGB of the electroluminescencelayer, and the evaporation device shown in FIG. 1 of the FirstEmbodiment Mode is applied. By selecting an EL material, which is amaterial for the electroluminescence layer, is selected appropriatelyusing a mask, an electroluminescence element showing light emission ofthree kinds of colors (specifically, R, G, and B) as theelectroluminescence element as a whole can be formed.

Subsequently, the substrate is conveyed to a film formation chamber 510by a conveying mechanism set in the conveying chamber 514 to form acathode. It is preferable that this cathode is transparent ortranslucent. It is preferable to use a thin film (1 nm to 10 nm) of ametal film (alloy such as MgAg, MgIn, CaF₂, LiF, or CaN, or film formedof an element belonging to first group or second group in a periodictable and aluminum by a co-evaporation method, or a laminated film ofthese films) formed by the evaporation method using resistance heatingor a lamination of the thin film (1 nm to 10 nm) of the metal film and atransparent conductive film as a cathode. In addition, after conveyingthe substrate to the conveyance chamber 514 from the conveyance chamber508 through a delivery chamber 511, the substrate is conveyed to a filmformation chamber 509, and a transparent conductive film is formed usingthe sputtering method.

The electroluminescence element of the lamination structure having thelayer containing organic compounds is formed by the above process. Inaddition, the substrate may be conveyed to a film formation chamber 513connected to the conveyance chamber 514 and sealed by forming aprotective film consisting of a silicon nitride film or a siliconnitride oxide film. Here, a target consisting of silicon, a targetconsisting of silicon oxide, or a target consisting of silicon nitrideis provided in the film formation chamber 513.

A bar-like target may be moved to a fixed substrate to form a protectivefilm. In addition, a protective film may be formed by moving a substrateto a fixed bar-like target.

For example, a silicon nitride film can be formed on a cathode bychanging a film formation chamber atmosphere to a nitrogen atmosphere oran atmosphere containing nitrogen and argon using a disc-like targetconsisting of silicon. In addition, a thin film containing carbon as amain component (a diamond-like carbon film (DLC film), a carbon nanotubefilm (CN film), or an amorphous carbon film) may be formed as aprotective film, and a film formation chamber using the CVD method maybe provided separately. The diamond-like carbon film (DLC film) can beformed by a plasma CVD method (representatively, an RF plasma CVDmethod, a microwave CVD method, an electron cyclotron resonance (ECR)CVD method, a hot filament method, etc.), a combustion flame method, asputtering method, an ion beam evaporation method, a laser evaporationmethod, and the like. As a reactive gas to be used for film formation, ahydrogen gas and a hydrocarbon gas (e.g., CH₄, C₂H₂, C₆H₆, etc.) areused. The gas is ionized by glow discharge, and ions are accelerated tocollide against a cathode, to which a negative self-bias is applied, toform a film. In addition, the carbon nanotube film (CN film) only has tobe formed using a C₂H₄ gas and an N₂ gas as a reactive gas. Note thatthe diamond-like carbon film (DLC film) and the carbon nanotube film (CNfilm) are insulating films that are transparent or translucent withrespect to visible light. Transparency with respect to visible lightmeans that a transmittance of visible light is 80 to 100%, andtranslucency with respect to visible light means that a transmittance ofvisible light is 50 to 80%.

In addition, instead of the protective layer, a protective filmconsisting of a lamination of a first inorganic insulating film, astress relief film, and a second inorganic insulating film may be formedon a cathode. For example, after forming the cathode, it is sufficientto convey the substrate to the film formation chamber 513 to form thefirst inorganic insulating film with a thickness of 5 nm to 50 nm,convey the substrate to the film formation chamber 513 to form thestress relief film (an inorganic layer, an organic compound layer, etc.)having moisture absorption and transparency with a thickness of 10 nm to100 nm with the evaporation method, and convey the substrate to the filmformation chamber 513 again to form the second inorganic insulating filmwith a thickness of 5 nm to 50 nm.

Subsequently, the substrate with the electroluminescence element formedthereon is conveyed to a sealing chamber 519.

A sealing substrate is set in a load chamber 517 from the outside andprepared. The sealing substrate is conveyed from the load chamber 517 toa conveyance chamber 527, and if necessary, conveyed to an optical filmadhesion chamber 529 for sticking a drying agent and an optical filter(a color filter, a polarized film, etc.). In addition, a sealingsubstrate, to which an optical film (a color filter, a polarized plate)is stuck in advance, may be set in the load chamber 517.

Note that it is preferable to perform annealing in a multi-stage heatingchamber 516 in advance in order to remove impurities such as moisture inthe sealing substrate. Then, in the case in which a seal material forsticking the sealing substrate to the substrate provided with theelectroluminescence element is formed in the sealing substrate, thesealing substrate is conveyed to the conveyance chamber 514 through adelivery chamber 542 and set in an ink jet chamber 515. A first sealmaterial surrounding a pixel portion is formed by an ink jet device (ordispense device) under decompression, and a second seal material forfilling an area surrounded by the first seal material is dripped. Sincethe detailed explanation of the ink jet chamber 515 is made in theSecond Embodiment Mode, the explanation is omitted here. In addition, anauxiliary wiring may be manufactured on a cathode consisting of atransparent conductive film with the ink jet device using a nano-metalink or the like. If baking is necessary, the sealing substrate only hasto be conveyed to the multi-stage heating chamber 516 and heated.

Then, the sealing substrate, on which the seal material is formed, isfurther conveyed to a sealing substrate stock chamber 530. Note that,although an example in which the seal member is formed on the sealingsubstrate is described here, the invention is not specifically limited,and a seal material may be formed on a substrate on which anelectroluminescence element is formed. In addition, an evaporation mask,which is used at the time of evaporation, may be stocked in the sealingsubstrate stock chamber 530.

Note that, since this Embodiment is the case of a both-side exitingstructure, the sealing substrate only has to be conveyed to the opticalfilm adhesion chamber 529 to stick an optical film on the inner side ofthe sealing substrate. Alternatively, after the substrate provided withthe electroluminescence element and the sealing substrate are stuck, thesealing substrate only has to be conveyed to the optical film adhesionchamber 529 to stick an optical film (a color film or a polarized plate)on the outer side of the sealing substrate.

Subsequently, the substrate and the sealing substrate are stuck in thesealing chamber 519, and UV rays are irradiated on the stuck pair ofsubstrates by an ultraviolet ray irradiating mechanism provided in thesealing chamber 519 to harden the seal material. It is preferable toirradiate UV rays from the sealing substrate side where a TFT, whichblocks light, is not provided. Note that, although ultraviolet curing orthermoset resin is used as the seal material here, the seal material isnot specifically limited as long as the seal material is an adhesive,and cured resin or the like, which hardens only with ultraviolet rays,may be used.

In the case in which ultraviolet rays are irradiated from the sealingsubstrate side in the case of the both-side exiting type, it ispreferable not to use ultraviolet curing resin because ultraviolet rayspass through the cathode to damage the layer containing organiccompounds. Therefore, in the case of the both-side exiting type in thisembodiment, it is preferable to use thermosetting transparent resin asresin to be filled.

Subsequently, the stuck pair of substrates are conveyed from the sealingchamber 519 to the conveying chamber 514 and from the conveyance chamber527 to a removal chamber 525 through the delivery chamber 542 andremoved.

In addition, after the substrates are removed from the removal chamber525, the substrates are heated to harden the seal material. In the casein which a panel structure is the top emittion type and thermoset resinis filled, the thermoset resin can be hardened simultaneously withheating treatment for hardening the seal material.

As described above, the electroluminescence element is not exposed tothe atmosphere until the electroluminescence element is enclosed in aclosed space completely by using the apparatus for forming a film shownin FIG. 4, it becomes possible to manufacture a highly reliableelectroluminescence device.

Note that, although not shown in the figure here, a control device forcontrolling a path, on which a substrate is moved to the respectivetreatment chambers, to realize full automation is provided.

In addition, this Embodiment can be combined with any one of the Firstto the Fourth Embodiment Modes freely.

Second Embodiment

In the present Embodiment, an example of fabricating a light-emittingdevice (double-side emission structure) comprising a light-emittingelement employing an organic compound layer as a light-emitting layer ona substrate having an insulated surface is shown in FIGS. 12A and 12B.

Further, FIG. 12A is a top view of the light-emitting device, FIG. 12Bis a cross-sectional view obtained by cutting FIG. 12A along A-A′. Thereference numeral 1101 stands for a source signal line drive circuit(shown by a dot line), 1102—an image unit, 1103—a gate signal line drivecircuit. Further, the reference numeral 1104 stands for a transparentsealing substrate and 1105—a first sealing material. The spacesurrounded by the first sealing material 1105 is filled with atransparent second sealing material 1107. The first sealing material1105 comprises a gap material for maintaining the substrate clearance.

Further, the reference numeral 1108 stands for a wiring for transmittingsignals input into the source signal line drive circuit 1101 and gatesignal line drive circuit 1103. It receives a video signal or clocksignal from a FPC (flexible printed circuit) 1109 serving as an externalinput terminal. Here, only the FPC is shown, but a printed wiring board(PWB) may be mounted on the FPC. Also, a resin 1150 is provided so as tosurround the FPC 1109.

The cross-sectional configuration will be explained below by using FIG.12B. A drive circuit and a pixel portion are formed on a transparentsubstrate 1110. Here, the source signal line drive circuit 1101 as thedrive circuit and the pixel portion 1102 are shown.

A CMOS circuit combining an n-channel TFT 1123 and a p-channel TFT 1124is formed as the source signal line drive circuit 1101. The TFTs formingthe drive circuit may be formed from a well-known CMOS circuit, PMOScircuit, or NMOS circuit. Furthermore, in the present example, adriver-unified configuration is shown in which the drive circuit isformed on the substrate, but such a configuration is not alwaysnecessary and the drive circuit can be formed on the outside, ratherthan on the substrate. Further, the structure of a TFT in which apolysilicon film or amorphous silicon film serves as an active layer isnot particularly limiting, and a top-gate TFT or a bottom-gate TFT maybe used.

Further, the pixel portion 1102 is composed of a plurality of pixelscomprising a TFT 1111 for switching, a TFT 1112 for current control, anda first electrode (anode) 113 electrically connected to the drainthereof. An n-channel TFT or a p-channel TFT may be used as the TFT 1112for current control, but when connection is made to the anode, thep-channel TFT is preferably used. Further, it is preferred that anappropriate holding capacitance (not shown in the Figure) be provided.Here, only the cross-sectional structure of one pixel of an extremelylarge number of pixels is shown and an example is shown in which twoTFTs were used for this one pixel, but three or more TFTs may be usedappropriately.

In this configuration the first electrode 1113 is directly connected tothe drain of TFT. Therefore, it is preferred that the lower layer of thefirst electrode 1113 be a material layer providing for ohmic contactwith the drain composed of silicon and that the uppermost layer which isin contact with the layer containing an organic compound be a materiallayer with a large work function. For example, a transparent conductivefilm (ITO (indium oxide tin alloy), indium oxide zinc oxide alloy(In₂O₃—ZnO), zinc oxide (ZnO), and the like) is used.

Further, an insulator (called a bank, a partition wall, a separatingwall, an embankment, and the like) 1114 is formed at both ends of thefirst electrode (anode) 1113. The insulator 1114 may be formed from anorganic resin film or an insulating film containing silicon. Here, aninsulator of the shape shown in FIG. 12B is formed as the insulator 1114by using a positive-type photosensitive acrylic resin film.

A curved surface having a curvature is formed at the upper end portionor lower end portion of the insulator 1114 in order to improve coverageof a layer containing an organic compound, which will be formed on theinsulator 1114. For example, when a positive-type photosensitive acrylis used as the material of the insulator 1114, it is preferred that thecurved surface having a curvature radius (0.2 μm-3 μm) be provided onlyat the upper end portion of the insulator 1114. Furthermore, eithernegative-type photosensitive compositions that are made insoluble in anenchant under light or positive-type compositions that are made solublein an etchant under light can be used as the insulator 1114.

Further, the insulator 1114 may be covered with a protective filmcomposed of an aluminum nitride film, an aluminum nitride oxide film, athin film containing carbon as the main component, or a silicon nitridefilm.

Further, a layer 1115 comprising an organic compound is selectivelyformed by a deposition method on the first electrode (anode) 1113. Inthe present example, the layer 1115 comprising an organic compound isformed in the production apparatus described in the Second EmbodimentMode and a uniform film thickness is obtained. Furthermore, a secondelectrode (cathode) 1116 is formed on the layer comprising an organiccompound 1115. A material with a low work function (Al, Ag, Li, Ca,alloys thereof, MgAg, MgIn, AlLi, CaF₂, or CaN) may be used for thecathode. Here, in order to pass the emitted light, a laminated layer ofa thin metal film (MgAg: film thickness 10 nm) with a decreased filmthickness and a transparent electrically conductive film (ITO (indiumoxide tin oxide alloy) with a film thickness of 110 nm, an indium oxidezinc oxide alloy (In₂O₃—ZnO), zinc oxide (ZnO), and the like) is used asthe second electrode (cathode) 1116. A light-emitting element 1118composed of the first electrode (anode) 1113, the layer 1115 comprisingan organic compound, and a second electrode (cathode) 1116 is thusformed. In the present example, white emitted light is obtained by useof a layer comprising an organic compounds 1115 formed by successivelylaminating CuPc (film thickness 20 nm), α-NPD (film thickness 30 nm),CBP (film thickness 30 nm) comprising an organometallic complexcomprising platinum as a central metal (Pt (ppy)acac), BCP (filmthickness 20 nm), and BCP:Li (film thickness 40 nm). This example is anexample in which the light-emitting element 1118 emits white light.Therefore, a color filter (here, for the sake of simplicity, theovercoat is not shown in the Figure) composed of a coloration layer 1131and a light-shielding layer (BM) 1132 is provided.

Further, in such dual-side light-emission display device, optical films1140 and 1141 are provided in order to prevent the background frompenetration and to prevent the external light reflection. A polarizingfilm (a polarizing plate of a high transmittance type, a thin lightpolarizing plate, a white light polarizing plate, a polarizing platecomprising high-performance dyes, an AR polarizing plate, and the like),a phase-difference film (a broadband 1/4λ plate, atemperature-compensated phase-difference film, a twistedphase-difference film, a phase-difference film with a wide viewingangle, a biaxially oriented phase-difference film, and the like), and aluminosity-increasing film may be used in an appropriate combination asthe optical films 1140 and 1141. For example, if polarizing films areused as the optical films 1140 and 1141 and arranged so that the lightpolarization directions are orthogonal to each other, it is possible toobtain an effect of preventing the penetration of background and aneffect of preventing the reflection. In this case, zones, which isoutside the portions where light is emitted and display is conducted,become black and the background can be prevented from penetrating andbeing seen even when the display is viewed from any side. Further,because the emitted light from the light-emitting panel passes onlythrough one polarizing plate, it is displayed as is.

The same effects as described hereinabove can be obtained in case thateven if the two polarizing films are not orthogonal, the lightpolarization directions are within an angle of ±45°, preferably, within±20° with respect to each other.

With the optical films 1140, 1141, it is possible to prevent thebackground from penetrating to become visible and making it difficult torecognize the display when a person views the display from one surface.

Further, one more optical film may be added. For example, one polarizingfilm absorbs S waves (or P waves), but a luminosity increasing film forreflecting S waves (or P waves) onto the light-emitting elements andreproducing them may be provided between the polarizing plate andlight-emitting panel. As a result, the amount of P waves (or S waves)that pass through the polarizing plate increases and the increase inintegral quantity of light can be obtained. In the dual-sidelight-emitting panels, the structures of layers that pass the light fromthe light-emitting elements are different. Therefore, the light emissionpatterns (luminosity, chromaticity balance, and the like) are differentand the optical films are suitable for adjusting the light emissionbalance on both sides. Further, in the dual-side light-emitting panels,the external light reflection intensities are also different. Therefore,it is preferred that the luminosity increasing film be provided betweenthe polarizing plate and light-emitting panel on the surface with alarger reflection.

Further, a transparent protective laminated layer 1117 is formed forsealing the light-emitting element 1118. The transparent protectivelaminated layer 1117 is composed of a laminated layer of a firstinorganic insulating film, a stress relaxation film, and a secondinorganic insulating film. A silicon nitride film, silicon oxide film,silicon oxide nitride film (SiNO film (composition ratio N>O), a SiONfilm (composition ratio N<O)), or a thin film containing carbon as themain component (for example, a DLC film, a CN film) obtained by asputtering method or a CVD method can be used as the first inorganicinsulating film and second inorganic insulating film. Those inorganicinsulating films have a strong blocking effect with respect to moisture,but if the film thickness increases, the film stresses increase and thefilm can be easily peeled or detached. However, stresses can be relaxedand moisture can be absorbed by sandwiching a stress relaxation filmbetween the first inorganic insulating film and second inorganicinsulating film. Further, even when fine holes (pinholes and the like)are formed for whatever reason in the first inorganic insulating filmduring deposition, they are filled with the stress relaxation film.Further, providing the second inorganic insulating film thereuponproduces a very strong blocking effect with respect to moisture oroxygen. Further a hygroscopic material with stresses less than those inthe inorganic insulating films is preferred as the stress relaxationfilm. Moreover, a transparent material is preferred. Further, materialfilms comprising organic compounds such as α-NPD(4,4′-bis-[N-(naphthyl)-N-phenyl-amino]biphenyl), BCP (bathocuproine),MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine),Alq₃ (tris-8-quinolinolatoaluminum complex) may be used as the stressrelaxation film. Those material films have hygroscopicity and are almosttransparent if the film thickness is small. Furthermore, because MgO,SrO₂, and SrO have hygroscopicity and light transparency and thin filmsthereof can be obtained by a deposition method, they can be used for thestress relaxation film. In the present example, a film formed in anatmosphere comprising nitrogen and argon by using a silicon target, thatis, a silicon nitride film with a strong blocking effect with respect tomoisture and impurities such as alkali metals is used as a firstinorganic insulating film or second inorganic insulating film, and athin film of Alq₃ produced by a deposition method is used as the stressrelaxation film. Further, in order to pass the emitted light to thetransparent protective laminated layer, the total film thickness of thetransparent protective laminated layer is preferably as small aspossible.

Further, the sealing substrate 1104 is pasted with a first sealingmaterial 1105 and a second sealing material 1107 under an inactive gasatmosphere in order to seal the light-emitting element 1118. An epoxyresin is preferably used as the first sealing material 1105. Further, nospecific limitation is placed on the second sealing material 1107,provided it is a material transparent to light. Typically, it ispreferred that a UV-curable or thermosetting epoxy resin be used. Here,a UV epoxy resin (manufactured by Electrolight Co., 1500Clear) with highheat resistance is used. This resin has a refractive index of 1.50, aviscosity of 500 cps, a Shore D hardness of 90, a tensile strength of3000 psi, a Tg point of 150° C., a volume resistance of 1×10¹⁵ Ω·cm, anda voltage resistance of 450 V/mil. Further, filling the space between apair of substrates with the second sealing material 1107 makes itpossible to increase the transmittance of the entire body with respectto that obtained when the space between the two substrates is empty(inactive gas). Further, it is preferred that the moisture or oxygenpermeability of the first sealing material 1105 and second sealingmaterial 1107 be as low as possible.

Further, in the present example, a plastic substrate composed of FRP(Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar,polyesters, acryls, and the like, can be used besides a glass substrateor quartz substrate as the material constituting the sealing substrate1104. Further, after the sealed substrate 1104 has been adhesivelybonded by using the first sealing material 1105 and second sealingmaterial 1107, sealing can be conducted with a third sealing material soas to cover the side surfaces (exposed surfaces).

Sealing the light-emitting element with the first sealing material 1105and second sealing material 1107 in the above-described manner makes itpossible to completely shield the light-emitting element from theoutside and to prevent the penetration of substances, such as moistureor oxygen, that enhance the deterioration of the organic compound layer.Therefore, a light-emitting device with high reliability is obtained.

Further, when a light-emitting device of a top-side emission type isfabricated, the second electrode (cathode) is preferably a reflectivemetal film (chromium, titanium nitride, and the like). Furthermore, whena light-emitting device of a bottom-side emission type is fabricated, ametal film (film thickness 50 nm-200 nm) composed of Al, Ag, Li, Ca,alloys thereof, MgAg, MgIn, and AlLi is preferably used for the firstelectrode (anode).

This example can be freely combined with the First to Fourth EmbodimentModes and the First Embodiment.

Third Embodiment

In this Embodiment, an example of an electronic equipment provided withtwo or more display devices will be described with reference to FIGS.13A to 13G. An electronic equipment equipped with an EL module can becompleted by implementing the present invention. The following areexamples of electronic equipment: video cameras, digital cameras, goggletype displays (head mounted displays), navigation systems, audioreproducing apparatuses (car audios, audio components, etc.), laptopcomputers, game machines, portable information terminals (mobilecomputers, cellular phones, portable game machines, electronic books,etc.), image reproducing apparatuses equipped with a recording medium(specifically, devices equipped with displays each of which is capableof playing a recording medium such as a digital versatile disk (DVD),and displaying the image thereof), and the like.

FIG. 13A is a perspective view showing a laptop computer, and FIG. 13Bis also a perspective view showing a folded laptop computer. Each laptop computer comprises a main body 2201, a casing 2202, display portions2203 a and 2203 b, a keyboard 2204, an external connection port 2205, apointing mouse 2206, etc.

Fourth Embodiment

FIG. 16 shows a diagram at the time when a cellular phone using thedisplay device of the invention is charged using a charger 2017. In FIG.16, light is emitted from both sides of the cellular phone in a state inwhich the cellular phone is opened. However, the cellular phone may bein a closed state.

Optical films 4002 and 4003 are provided on both sides of anelectroluminescence panel 4001. As the optical films 4002 and 4003, apolarized film (a high-transmission type polarized plate, a thinpolarized plate, a white polarized plate, a high-performance dyepolarized film, an AR polarized film, etc.), a phase difference film (awide band 1/4λ plate, a temperature compensation phase difference film,a twist phase difference film, a wide visual angle phase differencefilm, a biaxial orientation phase difference film, etc.), a luminanceimproved film, and the like only has to be combined appropriately andused. For example, if polarized films are used as the optical films 4002and 4003 and arranged such that polarizing directions of light areperpendicular to each other, an effect of preventing a background frombeing seen through and an effect of reflection prevention are obtained.In this case, parts other than parts that emit light and perform displayare black, and a background cannot be seen through even if the displayis seen from any side. In addition, light emitted from theelectroluminescence panel passes through only one polarized plate, thelight is displayed as it is. If two polarized plates are used in thisway, transmittance of light can be reduced to 5% or less, and contrastof 100 or more can be attained.

In general, in a display device using an EL element, the EL elementdeteriorates with time, and luminance decreases. In particular, in thecase of a display device in which EL elements are arranged in respectivepixels, since a lighting frequency is different depending on a pixel, adegree of deterioration varies depending on a pixel. Therefore, a pixelwith a higher lighting frequency deteriorates more severely to degradean image quality as a image sticking phenomenon. Thus, by performingdisplay at the time of charging or the like when the display device isnot in a used state usually and lighting pixels with a low frequency ofuse, it becomes possible to make image sticking less conspicuous. Ascontents of display at the time of charging, full lighting, an imageobtained by reversing bright and dark of a standard image (a waitingscreen, etc.), an image to be displayed by detecting pixels with a lowfrequency of use, and the like.

FIG. 14 is a block diagram corresponding to the cellular phone shown inFIG. 16. A CPU 2001 obtains a signal for detecting that the cellularphone has come into a charging state using a charger 2017 to therebyinstruct a display controller 2004 to display a signal corresponding tothe above, and a both-side electroluminescence display 2003 performslight emission. Note that, other than this information, information 2002on a side of the both-side electroluminescence display 2003 on whichdisplay is performed determined from opening and closing of a hinge2016, information input to a touch panel controller 2011 from a touchpanel 2010, information on a voice control 2009 using a microphone 2012and a speaker 2013, information from a keyboard 2015, and the like areinput to the CPU. The CPU is provided with a communication circuit 2005,a volatile memory 2006, a nonvolatile memory 2007, an external interface2008, a HDD 2014, and the like.

FIG. 15 is an example of means for creating the image obtained byreversing bright and dark of the standard signal (a waiting screen,etc.). A digital video signal of the standard signal (a waiting screen,etc.) is stored in a memory A 2104 having sub-memories 2104_1 to 2104_4or a memory B 2105 having sub-memories 2105_1 to 2105_4 by a switch2103. An output of a video signal selection switch 2106 is input to aswitch 2107, and it can be chosen whether a signal of the switch 2106 isinput to a display 2101 directly or reversed to be input. In the case inwhich reversal of bright and dark is necessary, the signal only has tobe reversed and input. This choice is performed by the displaycontroller 2102. In addition, in the case in which full lighting isperformed, a fixed voltage only has to be input to the display 2101.

In this way, light emission for reducing image sticking is performedduring charging, whereby deterioration of a display image quality can becontrolled.

In addition, it is possible to combine this Embodiment with one of theFirst to the Fourth Embodiment modes and the First to the ThirdEmbodiments freely.

ADVANTAGES OF THE INVENTION

According to the invention, manufacturing cost is reduced by increasingefficiency of use of a material forming a layer containing an organiccompound, and an apparatus for forming a film provided with anevaporation device, which is one of apparatuses for forming a filmexcellent in uniformity and throughput in formation of the layercontaining organic compounds, can be realized.

In addition, in the case in which a full-color electroluminescencedevice is manufactured, it is necessary to perform selective evaporationof an electroluminescence layer precisely. However, by adopting astructure in which parts of electroluminescence layers may overlap,further reduction in a size of a partition wall can be performed, whichcan be led to improvement of an aperture ratio.

1. A method of manufacturing a device, comprising: forming a first layerover a substrate by a first evaporation, wherein the first evaporationis performed in a chamber while a first evaporation source of the firstevaporation is moved; forming a second layer over the substrate by asecond evaporation, wherein the second evaporation is performed in thechamber while a second evaporation source of the second evaporation ismoved; and forming a third layer over the substrate by a thirdevaporation, wherein the third evaporation is performed in the chamberwhile a third evaporation source of the third evaporation is moved,wherein at least one of the first evaporation source, the secondevaporation source, and the third evaporation source includes a firstmaterial and a second material, wherein a first direction in which afirst material is flown out is different from a second direction inwhich a second material is flown out, and wherein the first direction isa direction substantially perpendicular to a surface of the substrate.2. The method of manufacturing a device according to claim 1, wherein atleast one of the first evaporation source, the second evaporationsource, and the third evaporation source includes a first containerincluding the first material and a second container including the secondmaterial, and wherein a guide portion of the first container does nothave a inclination, and wherein a guide portion of the second containerhas a inclination.
 3. The method of manufacturing a device according toclaim 1, wherein at least one of the first evaporation source, thesecond evaporation source and the third evaporation source is moved inan X direction and a Y direction.
 4. The method of manufacturing adevice according to claim 1, wherein at least one of the firstevaporation source, the second evaporation source and the thirdevaporation source is moved in an X direction, a Y direction, and a Zdirection.
 5. The method of manufacturing a device according to claim 1,wherein at least one of the first evaporation source, the secondevaporation source and the third evaporation source is moved by a robotarm.
 6. The method of manufacturing a device according to claim 1,wherein a temperature of a first heater for the first material and atemperature of a second heater for the second material are independentlyadjusted.
 7. A method of manufacturing a device, comprising: forming afirst light emitting layer over a substrate by a first evaporation,wherein the first evaporation is performed in a chamber while a firstevaporation source of the first evaporation is moved; forming a secondlight emitting layer over the first light emitting layer by a secondevaporation, wherein the second evaporation is performed in the chamberwhile a second evaporation source of the second evaporation is moved;and forming a color filter over the second light emitting layer, whereinat least one of the first evaporation source, and the second evaporationsource includes a first material and a second material, wherein a firstdirection in which a first material is flown out is different from asecond direction in which a second material is flown out.
 8. The methodof manufacturing a device according to claim 7, wherein at least one ofthe first evaporation source, and the second evaporation source includesa first container including the first material and a second containerincluding the second material, and wherein a guide portion of the firstcontainer does not have a inclination, and wherein a guide portion ofthe second container has a inclination.
 9. The method of manufacturing adevice according to claim 7, wherein at least one of the firstevaporation source and the second evaporation source is moved in an Xdirection and a Y direction.
 10. The method of manufacturing a deviceaccording to claim 7, wherein at least one of the first evaporationsource, and the second evaporation source is moved in an X direction, aY direction, and a Z direction.
 11. The method of manufacturing a deviceaccording to claim 7, wherein at least one of the first evaporationsource, and the second evaporation source is moved by a robot arm. 12.The method of manufacturing a device according to claim 7, wherein atemperature of a first heater for the first material and a temperatureof a second heater for the second material are independently adjusted.13. The method of manufacturing a device according to claim 7, whereinthe color filter comprises a coloration layer.
 14. A method ofmanufacturing a device, comprising: forming a first light emitting layerover a substrate by a first evaporation, wherein the first evaporationis performed in a chamber while a first evaporation source of the firstevaporation is moved; forming a second light emitting layer over thefirst light emitting layer by a second evaporation, wherein the secondevaporation is performed in the chamber while a second evaporationsource of the second evaporation is moved; and forming a third lightemitting layer over the second light emitting layer by a thirdevaporation, wherein the third evaporation is performed in the chamberwhile a third evaporation source of the third evaporation is moved,forming a color filter over the third light emitting layer, wherein oneof the first light emitting layer, the second light emitting layer, andthe third light emitting layer is capable of emitting a red color,wherein another of the first light emitting layer, the second lightemitting layer, and the third light emitting layer is capable ofemitting a green color, wherein the other one of the first lightemitting layer, the second light emitting layer, and the third lightemitting layer is capable of emitting a blue color, wherein at least oneof the first evaporation source, the second evaporation source, and thethird evaporation source includes a first material and a secondmaterial, wherein a first direction in which a first material is flownout is different from a second direction in which a second material isflown out.
 15. The method of manufacturing a device according to claim14, wherein at least one of the first evaporation source, the secondevaporation source, and the third evaporation source includes a firstcontainer including the first material and a second container includingthe second material, and wherein a guide portion of the first containerdoes not have a inclination, and wherein a guide portion of the secondcontainer has a inclination.
 16. The method of manufacturing a deviceaccording to claim 14, wherein at least one of the first evaporationsource, the second evaporation source and the third evaporation sourceis moved in an X direction and a Y direction.
 17. The method ofmanufacturing a device according to claim 14, wherein at least one ofthe first evaporation source, the second evaporation source and thethird evaporation source is moved in an X direction, a Y direction, anda Z direction.
 18. The method of manufacturing a device according toclaim 14, wherein at least one of the first evaporation source, thesecond evaporation source and the third evaporation source is moved by arobot arm.
 19. The method of manufacturing a device according to claim14, wherein a temperature of a first heater for the first material and atemperature of a second heater for the second material are independentlyadjusted.
 20. The method of manufacturing a device according to claim14, wherein the color filter comprises a coloration layer.